ISL2101AABZ

Obsolete

Renesas Electronics Corporation

100V/2A HALF BRIDGE DRIVER, PB FREE, 8LD SOIC / TUBE ROHS COMPLIANT: YES

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ISL2101AABZ

Obsolete

Renesas Electronics Corporation

100V/2A HALF BRIDGE DRIVER, PB FREE, 8LD SOIC / TUBE ROHS COMPLIANT: YES

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

ISL2101A Series

The ISL2100A, ISL2101A are 100V, high frequency, half-bridge N-channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL2100A has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2101A, like those of the ISL2100A, can now safely swing to the VDDsupply rail. Finally, both parts are available in a very compact 9 Ld DFN package to minimize the required PCB footprint.

Technical Specifications

Parameters and characteristics for this part

Specification	ISL2101AABZ

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	10 ns
Gate Channel	N-Channel
Gate Type	MOSFET
High Side Voltage - Max (Bootstrap)	114 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.2 V
Logic Voltage - VIL	1.4 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	10 ns
Voltage - Supply (Maximum)	14 V
Voltage - Supply (Minimum)	9 VDC

ISL2101A Series

100V, 2A Peak, High Frequency Half-Bridge Drivers

Part	Driven Configuration	Input Type	Package Length	Package Name	Package Width	Operating Temperature (Max)	Operating Temperature (Min)	Rise Time (Typ)	Fall Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Mounting Type	High Side Voltage - Max (Bootstrap)	Gate Channel	Gate Type	Number of Drivers	Channel Type	Package / Case
Renesas Electronics Corporation ISL2101AABZ-T	Half-Bridge	Non-Inverting	0.154 in	8-SOIC	3.9 mm	125 °C	-40 °C	10 ns	10 ns	2 A	2 A	1.4 V	2.2 V	14 V	9 VDC	Surface Mount	114 V	N-Channel	MOSFET	2	Independent
Renesas Electronics Corporation ISL2101AAR3Z-T	Half-Bridge	Non-Inverting	3 mm	9-DFN	3 mm	125 °C	-40 °C	10 ns	10 ns	2 A	2 A	1.4 V	2.2 V	14 V	9 VDC	Surface Mount	114 V	N-Channel	MOSFET	2	Independent	9-VFDFN Exposed Pad
Renesas Electronics Corporation ISL2101AAR3Z	Half-Bridge	Non-Inverting	3 mm	9-DFN	3 mm	125 °C	-40 °C	10 ns	10 ns	2 A	2 A	1.4 V	2.2 V	14 V	9 VDC	Surface Mount	114 V	N-Channel	MOSFET N-Channel MOSFET	2	Independent	9-VFDFN Exposed Pad
Renesas Electronics Corporation ISL2101AABZ	Half-Bridge	Non-Inverting	0.154 in	8-SOIC	3.9 mm	125 °C	-40 °C	10 ns	10 ns	2 A	2 A	1.4 V	2.2 V	14 V	9 VDC	Surface Mount	114 V	N-Channel	MOSFET	2	Independent

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

ISL2100A, ISL2101A Datasheet

ISL2101AABZ | Datasheet