IRLR6225TRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 4 MOHM; SUPER LOGIC LEVEL

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 4 MOHM; SUPER LOGIC LEVEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR6225TRPBF

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	3770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Technology	Supplier Device Package	FET Type	Package / Case
Infineon Technologies IRLR6225TRPBF	4 mOhm	2.5 V 4.5 V	3770 pF	1.1 V	72 nC	150 °C	-50 °C	100 A	20 V	12 V	63 W	Surface Mount	MOSFET (Metal Oxide)	TO-252AA (DPAK)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 100A (Tc) 63W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources