IXTP24N65X2M

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IXYS

MOSFET N-CH 650V 24A TO220

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IXYS

MOSFET N-CH 650V 24A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP24N65X2M

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	145 mOhm
Supplier Device Package	TO-220 Isolated Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
IXYS IXTP24N65X2M	30 V	37 W	36 nC	Through Hole	MOSFET (Metal Oxide)	24 A	N-Channel	2060 pF	10 V	TO-220-3 Full Pack Isolated Tab	145 mOhm	5 V	-55 °C	150 °C	650 V	TO-220 Isolated Tab

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.43

General part information

N-Channel 650 V 24A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab

Technical documentation and resources

No documents available