IXFG55N50

Obsolete

IXYS

MOSFET N-CH 500V 48A ISO264

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 500V 48A ISO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFG55N50

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds	9400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	ISO264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	FET Type	Vgs (Max)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
IXYS IXFG55N50	48 A	500 V	90 mOhm	9400 pF	150 °C	-40 °C	400 W	330 nC	MOSFET (Metal Oxide)	ISO264™	N-Channel	20 V	Through Hole	TO-264-3 TO-264AA	10 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 48A (Tc) 400W (Tc) Through Hole ISO264™

Technical documentation and resources

No documents available