SUP80090E-GE3

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Vishay Siliconix

MOSFET N-CH 150V 128A TO220AB

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Vishay Siliconix

MOSFET N-CH 150V 128A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP80090E-GE3

Current - Continuous Drain (Id) @ 25°C	128 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3425 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 150V 128A TO220AB

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Vgs(th) (Max) @ Id
Vishay Siliconix SUP80090E-GE3	95 nC	TO-220-3	128 A	20 V	N-Channel	3425 pF	9.4 mOhm	-55 °C	175 ░C	Through Hole	10 V	7.5 V	150 V	375 W	TO-220AB	MOSFET (Metal Oxide)	5 V

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General part information

N-Channel 150 V 128A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources