STF3HNK90Z

Obsolete

STMicroelectronics

MOSFET N-CH 800V 3A TO220FP

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Obsolete

STMicroelectronics

MOSFET N-CH 800V 3A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF3HNK90Z

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	690 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	4.2 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Technology	Vgs (Max)	Package / Case
STMicroelectronics STF3HNK90Z	800 V	35 nC	Through Hole	4.2 Ohm	-55 °C	150 °C	10 V	3 A	TO-220FP	690 pF	4.5 V	N-Channel	25 W	MOSFET (Metal Oxide)	30 V	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 3A (Tc) 25W (Tc) Through Hole TO-220FP

Technical documentation and resources