STP80NF70

NRND

STMicroelectronics

N-CHANNEL 68 V, 0.0082 OHM, 98 A, TO-220 STRIPFET II POWER MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

Documents AN3267 +13

STP80NF70

NRND

STMicroelectronics

N-CHANNEL 68 V, 0.0082 OHM, 98 A, TO-220 STRIPFET II POWER MOSFET

Deep-Dive with AI

Documents AN3267 +13

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP80NF70

Current - Continuous Drain (Id) @ 25°C	98 A
Drain to Source Voltage (Vdss)	68 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	9.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STP80NF55-08 Series

N-Channel 100V - 0.012Ohm - 80A - TO-220FP LOW GATE CHARGE STripFET(TM) POWER MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP80NF55-08AG	-55 °C	175 ░C	55 V	4 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole	3740 pF	Automotive	AEC-Q101	112 nC	N-Channel	10 V	TO-220	20 V	300 W
STMicroelectronics STP80NF55-08	-55 °C	175 ░C	55 V	4 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole					N-Channel	10 V	TO-220	20 V	300 W	3850 pF	155 nC
STMicroelectronics STP80N340K6	-55 °C	150 °C	800 V	4 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole	950 pF			17.8 nC	N-Channel	10 V	TO-220	30 V				115 W	340 mOhm	12 A
STMicroelectronics STP80N450K6	-55 °C	150 °C	800 V	4 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole	700 pF			17.3 nC	N-Channel	10 V	TO-220	30 V	100 W					10 A
STMicroelectronics STP80NF70	-55 °C	175 ░C	68 V	4 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole	2550 pF			75 nC	N-Channel	10 V	TO-220	20 V	190 W				9.8 mOhm	98 A
STMicroelectronics STP80NF10FP	-55 °C	175 ░C	100 V	4 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	Through Hole	4300 pF			189 nC	N-Channel	10 V	TO-220FP	20 V				45 W	15 mOhm	38 A
STMicroelectronics STP80NF55						TO-220-3	Through Hole							TO-220

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.12
		50	$ 1.70
		100	$ 1.40
		500	$ 1.18
		1000	$ 1.00
		2000	$ 0.95
		5000	$ 0.92
		10000	$ 0.89

Description

General part information

STP80NF55-08 Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Documents

Technical documentation and resources

Flyers (5 of 6)

STP80NF70

Deep-Dive with AI

STP80NF70

Deep-Dive with AI

Technical Specifications

STP80NF55-08 Series

Pricing

Description

STP80NF55-08 Series

Documents

AN3267

AN4191

AN4337

TN1225

DS6862

AN4390

UM1575

TN1224

Datasheet

STP80NF55-08 Series