UMD6NFHATR
ActiveBIPOLAR TRANSISTORS - BJT PNP+NPN DIGITAL TRANSISTOR (WITH BUILT-IN RESISTORS). DEVICES INTEGRATING TWO TRANSISTORS ARE AVAILABLE IN ULTRA-COMPACT PACKAGES, SUITABLE FOR VARIOUS APPLICATIONS SUCH AS PRE-AMPLIFIER DIFFERENTIAL AMPLIFICATION CIRCUITS, HIGH-FREQUENCY OSCILLATTO
UMD6NFHATR
ActiveBIPOLAR TRANSISTORS - BJT PNP+NPN DIGITAL TRANSISTOR (WITH BUILT-IN RESISTORS). DEVICES INTEGRATING TWO TRANSISTORS ARE AVAILABLE IN ULTRA-COMPACT PACKAGES, SUITABLE FOR VARIOUS APPLICATIONS SUCH AS PRE-AMPLIFIER DIFFERENTIAL AMPLIFICATION CIRCUITS, HIGH-FREQUENCY OSCILLATTO
Description
General part information
UMD6 Series
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Technical Specifications
Parameters and characteristics for this part
| Specification | UMD6NFHATR |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 250 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| NPN Count | 1 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | UMT6 |
| PNP Count | 1 |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) Resistance | 4.7 kOhm |
| Transistor Configuration | Pre-Biased, Dual |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
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