FF2MR12KM1PHOSA1

Obsolete

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

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Obsolete

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

Technical Specifications

Parameters and characteristics for this part

Specification	FF2MR12KM1PHOSA1

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	500 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	1340 nC
Input Capacitance (Ciss) (Max) @ Vds	39700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	2.13 mOhm
Supplier Device Package	AG-62MM
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Rds On (Max) @ Id, Vgs	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies FF2MR12KM1PHOSA1	2.13 mOhm	2 N-Channel (Half Bridge)	1340 nC	Module	5.15 V	Chassis Mount	500 A	1200 V	1.2 kV	39700 pF	AG-62MM	Silicon Carbide (SiC)	150 °C	-40 °C
Infineon Technologies FF2MR12KM1HOSA1	2.13 mOhm	2 N-Channel (Half Bridge)	1340 nC	Module	5.15 V	Chassis Mount	500 A	1200 V	1.2 kV	39700 pF	AG-62MM	Silicon Carbide (SiC)	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 500A (Tc) Chassis Mount AG-62MM

Technical documentation and resources

No documents available