
GPAS1005
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB

GPAS1005
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
Description
General part information
GPAS1005 Series
Diode 600 V 10A Surface Mount TO-263AB (D2PAK)
Technical Specifications
Parameters and characteristics for this part
| Specification | GPAS1005 |
|---|---|
| Capacitance | 50 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263AB (D2PAK) |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.1 V |
Pricing
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CAD
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Documents
Technical documentation and resources