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DMN2016UTS-13 - 8-TSSOP

DMN2016UTS-13

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Diodes Inc

MOSFET 2N-CH 20V 8.58A 8TSSOP

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DMN2016UTS-13 - 8-TSSOP

DMN2016UTS-13

Active
Diodes Inc

MOSFET 2N-CH 20V 8.58A 8TSSOP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2016UTS-13
Configuration2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C8.58 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]16.5 nC
Input Capacitance (Ciss) (Max) @ Vds1495 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-TSSOP
Package / Case [custom]0.173 "
Package / Case [custom]4.4 mm
Power - Max [Max]880 mW
Rds On (Max) @ Id, Vgs14.5 mOhm
Supplier Device Package8-TSSOP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.59
10$ 0.50
100$ 0.35
500$ 0.27
1000$ 0.22
Digi-Reel® 1$ 0.59
10$ 0.50
100$ 0.35
500$ 0.27
1000$ 0.22
Tape & Reel (TR) 2500$ 0.20
5000$ 0.19
12500$ 0.17
25000$ 0.17

Description

General part information

DMN2016UFX Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.