AOSD26313C

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 7A/5.7A 8SOIC

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 7A/5.7A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AOSD26313C

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	5.7 A, 7 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	33 nC
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF, 1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.7 W
Rds On (Max) @ Id, Vgs	32 mOhm, 20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V, 2.3 V

Part	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Mounting Type	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AOSD26313C	1.7 W	600 pF 1100 pF	33 nC	20 nC	2.2 V 2.3 V	8-SOIC	3.9 mm	0.154 in	N and P-Channel Complementary	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	5.7 A 7 A	30 V	-55 °C	150 °C	20 mOhm 32 mOhm

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General part information

Mosfet Array 30V 7A (Ta), 5.7A (Ta) 1.7W (Ta) Surface Mount 8-SOIC

Technical documentation and resources