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BDX53B - ONSEMI MC7812ACTG.

BDX53B

Active
STMicroelectronics

DARLINGTON TRANSISTOR, DARLINGTON, NPN, 80 V, 60 W, 8 A, TO-220, 3 PINS

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Search across all available documentation for this part.

DocumentsDS0845TN1225+3
BDX53B - ONSEMI MC7812ACTG.

BDX53B

Active
STMicroelectronics

DARLINGTON TRANSISTOR, DARLINGTON, NPN, 80 V, 60 W, 8 A, TO-220, 3 PINS

Deep-Dive with AI

DocumentsDS0845TN1225+3

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationBDX53BBDX53B Series
--
Current - Collector (Ic) (Max) [Max]8 A8 A
Current - Collector Cutoff (Max) [Max]500 çA500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce750 hFE750 hFE
Mounting TypeThrough HoleThrough Hole
Operating Temperature150 °C150 °C
Package / CaseTO-220-3TO-220-3
Power - Max [Max]60 W60 W
Supplier Device PackageTO-220TO-220
Vce Saturation (Max) @ Ib, Ic2 V2 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.92
50$ 0.76
100$ 0.55
500$ 0.46
1000$ 0.39
2000$ 0.35
5000$ 0.33
10000$ 0.31
NewarkEach 1$ 1.04
10$ 0.64
100$ 0.59
500$ 0.51
1000$ 0.46
2500$ 0.44
10000$ 0.42

BDX53B Series

NPN power Darlington transistor

PartSupplier Device PackageDC Current Gain (hFE) (Min) @ Ic, VcePackage / CaseCurrent - Collector Cutoff (Max) [Max]Voltage - Collector Emitter Breakdown (Max) [Max]Operating TemperaturePower - Max [Max]Current - Collector (Ic) (Max) [Max]Mounting TypeVce Saturation (Max) @ Ib, Ic
STMicroelectronics
BDX53B
STMicroelectronics
BDX53B
STMicroelectronics
BDX53B
STMicroelectronics
BDX53B
TO-220
750 hFE
TO-220-3
500 çA
80 V
150 °C
60 W
8 A
Through Hole
2 V

Description

General part information

BDX53B Series

The devices are manufactured in planar base island technology with monolithic Darlington configuration.