Catalog
NPN power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
NPN power Darlington transistor
NPN power Darlington transistor
| Part | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce | Package / Case | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Mounting Type | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BDX53B | ||||||||||
STMicroelectronics BDX53B | ||||||||||
STMicroelectronics BDX53B | ||||||||||
STMicroelectronics BDX53B | TO-220 | 750 hFE | TO-220-3 | 500 çA | 80 V | 150 °C | 60 W | 8 A | Through Hole | 2 V |