IPI50CN10NGHKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 100V 20A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 20A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI50CN10NGHKSA1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1090 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	44 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPI50CN10NGHKSA1	16 nC	I2PAK TO-262-3 Long Leads TO-262AA	20 V	50 mOhm	4 V	PG-TO262-3	1090 pF	N-Channel	20 A	100 V	44 W	10 V	Through Hole	MOSFET (Metal Oxide)	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 20A (Tc) 44W (Tc) Through Hole PG-TO262-3

Technical documentation and resources