2SC2713-GR,LF

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Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A TO236

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Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2713-GR,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Frequency - Transition	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type
Toshiba Semiconductor and Storage 2SC2713-GR,LF	100 MHz	Surface Mount	150 mW	100 nA	125 ¯C	100 mA	120 V	200 hFE	SC-59 SOT-23-3 TO-236-3	300 mV	NPN

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General part information

Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236

Technical documentation and resources