IXFQ28N60P3

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IXYS

MOSFET N-CH 600V 28A TO3P

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IXYS

MOSFET N-CH 600V 28A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ28N60P3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	3560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	695 W
Rds On (Max) @ Id, Vgs	260 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C
IXYS IXFQ28N60P3	Through Hole	695 W	N-Channel	50 nC	10 V	3560 pF	TO-3P	-55 °C	150 °C	260 mOhm	SC-65-3 TO-3P-3	30 V	600 V	5 V	MOSFET (Metal Oxide)	28 A

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General part information

N-Channel 600 V 28A (Tc) 695W (Tc) Through Hole TO-3P

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