VP2206N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 0.9 OHM
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VP2206N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 0.9 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VP2206N3-G | VP2206 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 640 mA | 640 - 750 mA |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V | 5 V |
| FET Type | P-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 450 pF | 450 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-39-3 Metal Can, TO-205AD, TO-226-3, TO-92-3 |
| Power Dissipation (Max) | - | 360 mW |
| Power Dissipation (Max) [Max] | 740 mW | 740 mW |
| Rds On (Max) @ Id, Vgs | 900 mOhm | 900 mOhm |
| Supplier Device Package | TO-92-3 | TO-39, TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 2.57 | |
| 25 | $ 2.13 | |||
| 100 | $ 1.93 | |||
| Microchip Direct | BAG | 1 | $ 2.57 | |
| 25 | $ 2.13 | |||
| 100 | $ 1.93 | |||
| 1000 | $ 1.62 | |||
| 5000 | $ 1.50 | |||
| 10000 | $ 1.38 | |||
VP2206 Series
MOSFET, P-Channel Enhancement-Mode, -60V, 0.9 Ohm
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Technology | Mounting Type | FET Type | Power Dissipation (Max) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VP2206N2 | 60 V | 900 mOhm | 3.5 V | TO-39 | -55 °C | 150 °C | 750 mA | 20 V | TO-205AD, TO-39-3 Metal Can | 450 pF | 10 V | 5 V | MOSFET (Metal Oxide) | Through Hole | P-Channel | 360 mW | |
Microchip Technology VP2206N3-G-P003 | |||||||||||||||||
Microchip Technology VP2206N3-G-P003 | 60 V | 900 mOhm | 3.5 V | TO-92-3 | -55 °C | 150 °C | 640 mA | 20 V | TO-226-3, TO-92-3 | 450 pF | 10 V | 5 V | MOSFET (Metal Oxide) | Through Hole | P-Channel | 740 mW | |
Microchip Technology VP2206N3-G | 60 V | 900 mOhm | 3.5 V | TO-92-3 | -55 °C | 150 °C | 640 mA | 20 V | TO-226-3, TO-92-3 | 450 pF | 10 V | 5 V | MOSFET (Metal Oxide) | Through Hole | P-Channel | 740 mW |
Description
General part information
VP2206 Series
VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.