IRF1018ESTRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 79 A, 0.0071 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 79 A, 0.0071 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1018ESTRLPBF

Current - Continuous Drain (Id) @ 25°C	79 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Input Capacitance (Ciss) (Max) @ Vds	2290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	8.4 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package
Infineon Technologies IRF1018ESTRLPBF	20 V	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	N-Channel	79 A	4 V	69 nC	Surface Mount	MOSFET (Metal Oxide)	2290 pF	110 W	8.4 mOhm	D2PAK

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General part information

N-Channel 60 V 79A (Tc) 110W (Tc) Surface Mount D2PAK

Technical documentation and resources