SS1H6LW RVG

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 1A SOD123W

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 1A SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	SS1H6LW RVG

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-123W
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation SS1H6LS RVG	1 A	700 mV	Surface Mount	1 µA	SOD-123H	Schottky	SOD-123HE	60 V	200 mA 500 ns	150 °C	-55 °C
Taiwan Semiconductor Corporation SS1H6LW RVG	1 A	700 mV	Surface Mount	500 nA	SOD-123W	Schottky	SOD-123W	60 V	200 mA 500 ns	175 ░C	-55 C

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General part information

Diode 60 V 1A Surface Mount SOD-123W

Technical documentation and resources