SSM3K59CTB,L3F

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A CST3B

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A CST3B

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K59CTB,L3F

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 8 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, No Lead
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	215 mOhm
Supplier Device Package	CST3B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Vgs(th) (Max) @ Id	Technology	FET Type	Package / Case	Supplier Device Package
Toshiba Semiconductor and Storage SSM3K59CTB,L3F	Surface Mount	2 A	130 pF	40 V	215 mOhm	1 W	12 V	1.8 V 8 V	150 °C	1.2 V	MOSFET (Metal Oxide)	N-Channel	3-SMD No Lead	CST3B

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 2A (Ta) 1W (Ta) Surface Mount CST3B

Technical documentation and resources