IXTC160N10T

Obsolete

IXYS

MOSFET N-CH 100V 83A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 100V 83A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTC160N10T

Current - Continuous Drain (Id) @ 25°C	83 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	132 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
IXYS IXTC160N085T	ISOPLUS220™	110 A	85 V	Through Hole	ISOPLUS220™	N-Channel	MOSFET (Metal Oxide)
IXYS IXTC160N10T	ISOPLUS220™	83 A	100 V	Through Hole	ISOPLUS220™	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	140 W	10 V	6600 pF	132 nC	20 V	7.5 mOhm	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 83A (Tc) 140W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available