STPSC10H065G-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 28.5 NC, TO-263 (D2PAK)
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STPSC10H065G-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 28.5 NC, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC10H065G-TR | STPSC10H065 Series |
|---|---|---|
| Capacitance @ Vr, F | 480 pF | 480 pF |
| Current - Average Rectified (Io) | 10 A | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA | 100 µA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 | SC-63, DPAK (2 Leads + Tab), TO-252-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | D2PAK | DPAK, D2PAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V | 1.75 V |
STPSC10H065 Series
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
| Part | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Technology | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Package / Case | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC10H065B-TR | 100 µA | 1.75 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | DPAK (2 Leads + Tab), SC-63, TO-252-3 | DPAK | 0 ns | 650 V | 480 pF |
STMicroelectronics STPSC10H065G-TR | 100 µA | 1.75 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | D2PAK | 0 ns | 650 V | 480 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC10H065 Series
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC10H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources