IPW65R060CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 60 MOHM;

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IPW65R060CFD7XKSA1

Active

Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 60 MOHM;

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R060CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	3288 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	171 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW65R060 Series

Part	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type
Infineon Technologies IPW65R060CFD7XKSA1	650 V	N-Channel	PG-TO247-3	10 V	4.5 V	60 mOhm	3288 pF	MOSFET (Metal Oxide)	68 nC	171 W	36 A	TO-247-3	-55 °C	150 °C	20 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	240	$ 3.57
Newark	Each	1	$ 8.67
		10	$ 7.70
		25	$ 7.19
		50	$ 6.76
		100	$ 6.32
		480	$ 6.31
		720	$ 5.16

Description

General part information

IPW65R060 Series

Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPW65R060CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.