STF8NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 7A TO220FP

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 600V 7A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF8NM60N

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
STMicroelectronics STF8NK85Z	850 V	TO-220-3 Full Pack	1.4 Ohm	1870 pF	N-Channel	4.5 V	TO-220FP	60 nC	10 V	-55 °C	150 °C	6.7 A	Through Hole	30 V	35 W	MOSFET (Metal Oxide)
STMicroelectronics STF8NM60N	600 V	TO-220-3 Full Pack	650 mOhm	560 pF	N-Channel	4 V	TO-220FP		10 V	-55 °C	150 °C	7 A	Through Hole	25 V		MOSFET (Metal Oxide)	19 nC	25 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 7A (Tc) 25W (Tc) Through Hole TO-220FP

Technical documentation and resources