TSM042N03CS RLG

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 30V 30A 8SOP

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 30V 30A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TSM042N03CS RLG

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	7 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology
Taiwan Semiconductor Corporation TSM042N03CS RLG	Surface Mount	4.5 V 10 V	30 A	N-Channel	8-SOP	7 W	4.2 mOhm	30 V	175 °C	8-SOIC	3.9 mm	0.154 in	24 nC	20 V	2.5 V	2200 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 30 V 30A (Tc) 7W (Tc) Surface Mount 8-SOP

Technical documentation and resources