IPB017N10N5LFATMA1
ActiveOPTIMOS™ 5 LINEAR FET N-CHANNEL POWER MOSFET 100 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.7 MOHM; WIDE SOA
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IPB017N10N5LFATMA1
ActiveOPTIMOS™ 5 LINEAR FET N-CHANNEL POWER MOSFET 100 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.7 MOHM; WIDE SOA
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB017N10N5LFATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 195 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK |
| Power Dissipation (Max) [Max] | 313 W |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.1 V |
Pricing
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Description
General part information
IPB017 Series
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art RDS(on)of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�
Documents
Technical documentation and resources