STW60N65M5

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STMicroelectronics

MOSFET N-CH 650V 46A TO247

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STMicroelectronics

MOSFET N-CH 650V 46A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	STW60N65M5

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	139 nC
Input Capacitance (Ciss) (Max) @ Vds	6810 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs [Max]	59 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 650V 46A TO247

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STW60N65M5	Through Hole	10 V	650 V	255 W	150 °C	5 V	TO-247-3	TO-247-3	MOSFET (Metal Oxide)	46 A	25 V	6810 pF	59 mOhm	N-Channel	139 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 46A (Tc) 255W (Tc) Through Hole TO-247-3

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