1SS193,LF

Active

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1SS193,LF	1SS193 Series

Capacitance @ Vr, F	3 pF	3 pF
Current - Average Rectified (Io)	100 mA	100 mA
Current - Reverse Leakage @ Vr	500 nA	500 nA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction	125 °C	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns	4 ns
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	S-Mini	S-Mini
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V	80 V

DIODE GEN PURP 80V 100MA S-MINI

Part	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Speed	Mounting Type	Current - Average Rectified (Io)
Toshiba Semiconductor and Storage 1SS193S,LF(D	Standard	SC-59, SOT-23-3, TO-236-3	80 V	S-Mini	125 °C	500 nA	4 ns	3 pF	Any Speed	200 mA	Surface Mount	100 mA
Toshiba Semiconductor and Storage 1SS193,LF	Standard	SC-59, SOT-23-3, TO-236-3	80 V	S-Mini	125 °C	500 nA	4 ns	3 pF	Any Speed	200 mA	Surface Mount	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 100mA Surface Mount S-Mini

Technical documentation and resources