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FM22LD16-55-BG - 48-TFBGA

FM22LD16-55-BG

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Infineon Technologies

FERROELECTRIC RAM (FRAM), 4 MBIT, 256K X 16BIT, PARALLEL, 2.7 V TO 3.6 V SUPPLY, FBGA-48

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FM22LD16-55-BG - 48-TFBGA

FM22LD16-55-BG

Active
Infineon Technologies

FERROELECTRIC RAM (FRAM), 4 MBIT, 256K X 16BIT, PARALLEL, 2.7 V TO 3.6 V SUPPLY, FBGA-48

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Technical Specifications

Parameters and characteristics for this part

SpecificationFM22LD16-55-BG
Access Time110 ns
Memory FormatFRAM
Memory InterfaceParallel
Memory Organization256 K
Memory Size512 kb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case48-TFBGA
Supplier Device Package48-FBGA (6x8)
TechnologyFRAM (Ferroelectric RAM)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page110 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 46.04
10$ 40.87
25$ 38.97
40$ 38.03
80$ 36.68
230$ 34.71
NewarkEach 1$ 42.56
5$ 40.20
10$ 37.82
25$ 35.18
50$ 33.78
100$ 32.05

Description

General part information

FM22LD16 Series

FM22LD16-55-BG is a 4-Mbit (256K × 16) F-RAM memory. It is a non-volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against inadvertent access and data corruption under this condition. The device also features software-controlled write protection.

Documents

Technical documentation and resources