
FM22LD16-55-BG
ActiveFERROELECTRIC RAM (FRAM), 4 MBIT, 256K X 16BIT, PARALLEL, 2.7 V TO 3.6 V SUPPLY, FBGA-48
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FM22LD16-55-BG
ActiveFERROELECTRIC RAM (FRAM), 4 MBIT, 256K X 16BIT, PARALLEL, 2.7 V TO 3.6 V SUPPLY, FBGA-48
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM22LD16-55-BG |
|---|---|
| Access Time | 110 ns |
| Memory Format | FRAM |
| Memory Interface | Parallel |
| Memory Organization | 256 K |
| Memory Size | 512 kb |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x8) |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page | 110 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FM22LD16 Series
FM22LD16-55-BG is a 4-Mbit (256K × 16) F-RAM memory. It is a non-volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against inadvertent access and data corruption under this condition. The device also features software-controlled write protection.
Documents
Technical documentation and resources