STV160NF03LT4

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STMicroelectronics

MOSFET N-CH 30V 160A 10POWERSO

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STMicroelectronics

MOSFET N-CH 30V 160A 10POWERSO

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STV160NF03LT4	STV160 Series

Current - Continuous Drain (Id) @ 25°C	160 A	160 A
Drain to Source Voltage (Vdss)	30 V	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V	5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC	140 - 160 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF	4700 - 5350 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature	175 °C	175 °C
Package / Case	PowerSO-10 Exposed Bottom Pad	PowerSO-10 Exposed Bottom Pad
Power Dissipation (Max)	210 W	210 W
Rds On (Max) @ Id, Vgs	2.8 mOhm	2.8 - 3 mOhm
Supplier Device Package	10-PowerSO	10-PowerSO
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	15 V	15 V
Vgs(th) (Max) @ Id	1 V	1 V

MOSFET N-CH 30V 160A 10POWERSO

Part	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STV160NF03LT4	PowerSO-10 Exposed Bottom Pad	2.8 mOhm	N-Channel	15 V	1 V	175 °C	30 V	10 V	5 V	140 nC	Surface Mount	10-PowerSO	210 W	MOSFET (Metal Oxide)	160 A	4700 pF
STMicroelectronics STV160NF03LAT4	PowerSO-10 Exposed Bottom Pad	3 mOhm	N-Channel	15 V	1 V	175 °C	30 V	10 V	5 V	160 nC	Surface Mount	10-PowerSO	210 W	MOSFET (Metal Oxide)	160 A	5350 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 160A (Tc) 210W (Tc) Surface Mount 10-PowerSO

Technical documentation and resources