MMIX1F160N30T

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IXYS

MOSFET N-CH 300V 102A 24SMPD

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IXYS

MOSFET N-CH 300V 102A 24SMPD

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1F160N30T

Current - Continuous Drain (Id) @ 25°C	102 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	335 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max)	570 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)
IXYS MMIX1F160N30T	Surface Mount	10 V	20 V	MOSFET (Metal Oxide)	24-SMPD	-55 °C	150 °C	24-PowerSMD 21 Leads	5 V	335 nC	102 A	20 mOhm	570 W	2800 pF	N-Channel	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 300 V 102A (Tc) 570W (Tc) Surface Mount 24-SMPD

Technical documentation and resources

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