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DMTH8008SPSQ-13 - PowerDI5060-8

DMTH8008SPSQ-13

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Diodes Inc

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH8008SPSQ-13 - PowerDI5060-8

DMTH8008SPSQ-13

Active
Diodes Inc

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH8008SPSQ-13
Current - Continuous Drain (Id) @ 25°C92 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1950 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)1.6 W, 100 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7.8 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.47
5000$ 0.45
12500$ 0.44

Description

General part information

DMTH8008SPSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in DC-DC converters and load switches.