1SS196(TE85L,F)

Active

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

Technical Specifications

Parameters and characteristics for this part

Specification	1SS196(TE85L,F)

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-59-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

DIODE GEN PURP 80V 100MA SC59-3

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Supplier Device Package	Speed	Speed	Reverse Recovery Time (trr)	Package / Case	Technology	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Current - Average Rectified (Io)	Mounting Type
Toshiba Semiconductor and Storage 1SS196(TE85L,F)	80 V	125 °C	SC-59-3	Any Speed	200 mA	4 ns	SC-59, SOT-23-3, TO-236-3	Standard	500 nA	3 pF	100 mA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 100mA Surface Mount SC-59-3

Technical documentation and resources