1SS196(TE85L,F)

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DIODE GEN PURP 80V 100MA SC59-3

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DIODE GEN PURP 80V 100MA SC59-3

Description

General part information

Diode 80 V 100mA Surface Mount SC-59-3

Parameters and characteristics for this part

Specification	1SS196(TE85L,F)

Capacitance	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SC-59-3
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	1.2 V

Part	Current - Reverse Leakage	Package Name	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Technology	Capacitance	Voltage - Forward (Vf) (Max)	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Current - Average Rectified (Io)
Toshiba Semiconductor and Storage 1SS196(TE85L,F)	500 nA	SC-59-3	80 V	125 °C	Surface Mount	SC-59 SOT-23-3 TO-236-3	4 ns	Standard	3 pF	1.2 V	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	100 mA

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