Zenode.ai Logo
Beta
K
2ED21094S06JXUMA1 - XEDXXXX

2ED21094S06JXUMA1

Active
Infineon Technologies

THE 2ED21094S06J IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE AND SHUTDOWN (DSO-14 PACKAGE)

Deep-Dive with AI

Search across all available documentation for this part.

2ED21094S06JXUMA1 - XEDXXXX

2ED21094S06JXUMA1

Active
Infineon Technologies

THE 2ED21094S06J IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE AND SHUTDOWN (DSO-14 PACKAGE)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2ED21094S06JXUMA1
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]700 mA
Current - Peak Output (Source, Sink) [custom]290 mA
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]650 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case14-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]100 ns
Supplier Device PackagePG-DSO-14-49
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.72
10$ 1.55
25$ 1.46
100$ 1.25
250$ 1.17
500$ 1.02
1000$ 0.85
Digi-Reel® 1$ 1.72
10$ 1.55
25$ 1.46
100$ 1.25
250$ 1.17
500$ 1.02
1000$ 0.85
Tape & Reel (TR) 2500$ 0.79
5000$ 0.76
12500$ 0.73
NewarkEach (Supplied on Cut Tape) 1$ 1.49
10$ 1.06
25$ 1.03
50$ 0.99
100$ 0.96
250$ 0.92
500$ 0.89
1000$ 0.86

Description

General part information

2ED21094 Series

650 V half-bridge high speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available:2ED2109S06F. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources