ZVNL110GTA

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Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 600 MA, 3 OHM, SOT-223, SURFACE MOUNT

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Active

Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 600 MA, 3 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	ZVNL110GTA

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	75 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel Enhancement Mode Vertical DMOS FET

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Technology
Diodes Inc ZVNL110GTA	SOT-223-3	100 V	N-Channel	75 pF	Surface Mount	1.1 W	3 Ohm	20 V	1.5 V	600 mA	-55 °C	150 °C	10 V	5 V	TO-261-4 TO-261AA	MOSFET (Metal Oxide)
Diodes Inc ZVNL110A	TO-92	100 V	N-Channel	75 pF	Through Hole	700 mW	3 Ohm	20 V	1.5 V	320 mA	-55 °C	150 °C	10 V	5 V	TO-226-3 TO-92-3	MOSFET (Metal Oxide)
Diodes Inc ZVNL110ASTZ	E-Line (TO-92 compatible)	100 V	N-Channel	75 pF	Through Hole	700 mW	3 Ohm	20 V	1.5 V	320 mA	-55 °C	150 °C	10 V	5 V	E-Line-3	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources