JANTX2N3810
ActivePNP SILICON DUAL SWITCHING -60V, -0.05A
JANTX2N3810
ActivePNP SILICON DUAL SWITCHING -60V, -0.05A
Description
General part information
JANTX2N3810-Dual-Transistor Series
This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC).
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N3810 |
|---|---|
| Current - Collector (Ic) (Max) | 0.05 mA |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 150 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-78-6 Metal Can |
| Package Name | TO-78-6 |
| PNP Count | 2 |
| Power - Max | 350 mW |
| Qualification | 336, MIL-PRF-19500 |
| Transistor Configuration | Dual |
| Transistor Type | PNP |
| Vce Saturation (Max) | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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