IPP072N10N3GXKSA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 80 A, 0.0062 OHM, TO-220, THROUGH HOLE

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IPP072N10N3GXKSA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 80 A, 0.0062 OHM, TO-220, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP072N10N3GXKSA1

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	4910 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPP072 Series

Part	Supplier Device Package	FET Type	Power Dissipation (Max)	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)
Infineon Technologies IPP072N10N3GXKSA1	PG-TO220-3	N-Channel	150 W	20 V	MOSFET (Metal Oxide)	68 nC	7.2 mOhm	3.5 V	4910 pF	Through Hole	6 V 10 V	-55 °C	175 ░C	TO-220-3	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.31
		50	$ 1.29
		100	$ 1.16
		500	$ 0.94
		1000	$ 0.84
		2000	$ 0.80
		5000	$ 0.79
Digikey	Tube	1	$ 2.72
		10	$ 1.76
		100	$ 1.21
		500	$ 0.98
		1000	$ 0.90
		2000	$ 0.84
		5000	$ 0.83
Newark	Each	1	$ 3.02
		10	$ 1.84
		100	$ 1.70
		500	$ 1.46
		1000	$ 1.31
		2500	$ 1.31
		5000	$ 1.31

Description

General part information

IPP072 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources