IPD042P03L3GATMA1

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Infineon Technologies

OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; DPAK TO-252 PACKAGE; 4.2 MOHM;

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IPD042P03L3GATMA1

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Infineon Technologies

OPTIMOS™ P-CHANNEL POWER MOSFET -30 V ; DPAK TO-252 PACKAGE; 4.2 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD042P03L3GATMA1

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	175 nC
Input Capacitance (Ciss) (Max) @ Vds	12400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

IPD042 Series

Part	FET Type	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPD042P03L3GATMA1	P-Channel	4.2 mOhm	MOSFET (Metal Oxide)	150 W	PG-TO252-3	2 V	30 V	12400 pF	-55 °C	175 ░C	4.5 V 10 V	Surface Mount	175 nC	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	70 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.62
		10	$ 1.69
		100	$ 1.16
		500	$ 0.93
		1000	$ 0.86
	Digi-Reel®	1	$ 2.62
		10	$ 1.69
		100	$ 1.16
		500	$ 0.93
		1000	$ 0.86
	Tape & Reel (TR)	2500	$ 0.78
		5000	$ 0.75
Newark	Each (Supplied on Full Reel)	2500	$ 0.72

Description

General part information

IPD042 Series

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources