MDO500-20N1

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IXYS

DIODE GEN PURP 2KV 560A Y1-CU

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IXYS

DIODE GEN PURP 2KV 560A Y1-CU

Technical Specifications

Parameters and characteristics for this part

Specification	MDO500-20N1

Capacitance @ Vr, F	576 pF
Current - Average Rectified (Io)	560 A
Current - Reverse Leakage @ Vr	30 mA
Mounting Type	Chassis Mount
Package / Case	Y1-CU
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Y1-CU
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Supplier Device Package	Speed	Speed	Technology	Package / Case	Current - Reverse Leakage @ Vr
IXYS MDO500-18N1	1800 V	1.3 V	560 A	762 pF	Chassis Mount	Y1-CU	Standard Recovery >500ns	200 mA	Standard	Y1-CU	30 mA
IXYS MDO500-20N1	2000 V	1.3 V	560 A	576 pF	Chassis Mount	Y1-CU	Standard Recovery >500ns	200 mA	Standard	Y1-CU	30 mA

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General part information

Diode 2000 V 560A Chassis Mount Y1-CU

Technical documentation and resources