MJE350

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 300 V, 20.8 W, 500 MA, 30 ROHS COMPLIANT: YES

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Active

STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 300 V, 20.8 W, 500 MA, 30 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	MJE350

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20.8 W
Supplier Device Package	SOT-32-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300 V

COMPLEMETARY SILICON POWER TRANSISTORS

Part	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Mounting Type	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
STMicroelectronics MJE350	PNP	20.8 W	500 mA	30	300 V	TO-126-3 TO-225AA	Through Hole	150 °C	100 µA	SOT-32-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.

The complementary PNP type is MJE350.

Technical documentation and resources