STFI24N60M2

Obsolete

STMicroelectronics

MOSFET N CH 600V 18A TO281

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Obsolete

STMicroelectronics

MOSFET N CH 600V 18A TO281

Technical Specifications

Parameters and characteristics for this part

Specification	STFI24N60M2

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STFI24N60M2	4 V	190 mOhm	N-Channel	29 nC	600 V	18 A	Through Hole	MOSFET (Metal Oxide)	25 V	10 V	1060 pF	TO-262-3 Full Pack I2PAK	TO-281 (I2PAKFP)	-55 °C	150 °C
STMicroelectronics STFI24NM60N	4 V	190 mOhm	N-Channel	46 nC	600 V	17 A	Through Hole	MOSFET (Metal Oxide)	30 V	10 V	1400 pF	TO-262-3 Full Pack I2PAK	TO-281 (I2PAKFP)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 18A (Tc) 30W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources