JAN2N5671

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Microchip Technology

90V 30A 6W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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JAN2N5671

Active

Microchip Technology

90V 30A 6W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

JAN2N5671-Transistor Series

This specification covers the performance requirements for NPN, silicon, high-power, 2N5671 and 2N5672 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/488.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N5671

Current - Collector (Ic) (Max)	30 A
Current - Collector Cutoff (Max)	10 mA
DC Current Gain (hFE) (Min)	20
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-3, TO-204AA
Package Name	TO-3
Power - Max	6 W
Qualification	MIL-PRF-19500, 488
Transistor Type	NPN
Vce Saturation (Max)	5 V
Voltage - Collector Emitter Breakdown (Max)	90 V

JAN2N5671-Transistor Series

NPN Silicon High-Power 90V to 120V, 30A

Part	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max	Transistor Type	Qualification	Grade	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Package Name	Package / Case	Vce Saturation (Max)
Microchip Technology JAN2N5671	20	30 A	-65 °C	200 °C	6 W	NPN	488 MIL-PRF-19500	Military	Through Hole	90 V	10 mA	TO-3	TO-204AA TO-3	5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

JAN2N5671 | Datasheet

Product Change Notice EN

2N5671 and 2N5672