STQ2NK60ZR-AP

Obsolete

STMicroelectronics

MOSFET N-CH 600V 400MA TO92-3

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 400MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	STQ2NK60ZR-AP

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Vgs (Max)
STMicroelectronics STQ2NK60ZR-AP	TO-92-3	8 Ohm	-55 °C	150 °C	3 W	10 nC	4.5 V	N-Channel	10 V	600 V	400 mA	TO-226-3 TO-92-3	170 pF	Through Hole	MOSFET (Metal Oxide)	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

Technical documentation and resources