STTA2006PI

Obsolete

STMicroelectronics

DIODE GEN PURP 600V 20A DOP3I

Search across all available documentation for this part.

Obsolete

STMicroelectronics

DIODE GEN PURP 600V 20A DOP3I

Technical Specifications

Parameters and characteristics for this part

Specification	STTA2006PI

Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	DOP3I-2 Insulated (Straight Leads)
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	DOP3I
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

Part	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Reverse Recovery Time (trr)	Package / Case	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STTA2006PI	Standard	DOP3I	100 µA	150 °C	60 ns	DOP3I-2 Insulated (Straight Leads)	200 mA 500 ns	Through Hole	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 20A Through Hole DOP3I

Technical documentation and resources

No documents available