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BUK9M120-100EX

BUK9M120-100EX

Active
Nexperia USA Inc.

N-CHANNEL 100 V, 120 MΩ LOGIC LEVEL MOSFET IN LFPAK33

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BUK9M120-100EX

BUK9M120-100EX

Active
Nexperia USA Inc.

N-CHANNEL 100 V, 120 MΩ LOGIC LEVEL MOSFET IN LFPAK33

Find alt

Description

General part information

BUK9M120 Series

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK9M120-100EX
Current - Continuous Drain (Id) (Tc)11.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)8.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)882 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-LFPAK33 (5-Lead), SOT-1210
Package NameLFPAK33
Power Dissipation (Max)44 W
QualificationAEC-Q101
Rds On (Max)119 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max)2.05 V

Pricing

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CAD

3D models and CAD resources for this part