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IXFX80N50P

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LITTELFUSE

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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IXFX80N50P

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LITTELFUSE

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFX80N50 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX80N50P

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	197 nC
Input Capacitance (Ciss) (Max)	12700 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3 Variant
Package Name	PLUS247™-3
Power Dissipation (Max)	1040 W
Rds On (Max)	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

IXFX80N50 Series

DiscMSFT NChHiPerFET-Q3 Class TO-247AD

Part	FET Type	Package Name	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	Package / Case
LITTELFUSE IXFX80N50P	N-Channel	PLUS247™-3	197 nC	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	500 V	5 V	80 A	65 mOhm	1040 W	12700 pF	30 V	Through Hole	TO-247-3 Variant
LITTELFUSE IXFX80N50Q3	N-Channel	PLUS247™-3	200 nC	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	500 V	6.5 V	80 A	65 mOhm	1250 W	10000 pF	30 V	Through Hole	TO-247-3 Variant

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

IXFX80N50P | Datasheet