IPS60R1K0CEAKMA1

Obsolete

Infineon Technologies

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 1000 MOHM; PRICE/PERFORMANCE

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Obsolete

Infineon Technologies

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 1000 MOHM; PRICE/PERFORMANCE

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R1K0CEAKMA1

Current - Continuous Drain (Id) @ 25°C	6.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	61 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
Infineon Technologies IPS60R1K0CEAKMA1	3.5 V	61 W	20 V	6.8 A	Through Hole	N-Channel	600 V	13 nC	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	10 V	1 Ohm	280 pF	150 °C	-40 °C	PG-TO251-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 6.8A (Tj) 61W (Tc) Through Hole PG-TO251-3

Technical documentation and resources