STP9NM60N

NRND

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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NRND

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	STP9NM60N

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.4 nC
Input Capacitance (Ciss) (Max) @ Vds	452 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	745 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
STMicroelectronics STP9NM60N	150 °C	N-Channel	17.4 nC	TO-220-3	25 V	70 W	Through Hole	6.5 A	MOSFET (Metal Oxide)	745 mOhm	600 V	4 V	452 pF	10 V	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 6.5A (Tc) 70W (Tc) Through Hole TO-220

Technical documentation and resources